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Characterization of Sn-doped CuO thin films prepared by a sol–gel method

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Abstract

This study examined the influence of the Sn doping concentration on the structural, electrical and optical properties of Sn-doped copper oxide (Sn:CuO) thin films synthesized on glass substrates using a facile sol–gel method. The samples were characterized by X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy, Hall Effect measurements, and UV–visible spectroscopy. The carrier concentration, Hall mobility and resistivity of the Sn:CuO films were 9.14 × 1015–1.08 × 1016 cm−3, 6.14–10.5 cm2/Vs and 47.4–77.5 Ω cm, respectively. The crystallite size of the films decreased with increasing Sn content from 84.1 to 61.8 nm. The band gap trended downward from 2.0 to 1.95 eV with increasing Sn doping content. The results showed that SnO2 doping strongly affects the structural, electrical and optical properties of the films.

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Acknowledgments

This work was supported by the Global Frontier R&D Program (2013M3A6B1078874) on Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT & Future Planning, and by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) through GCRC-SOP (No. 2011-0030013).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan, 609-735, Republic of Korea

    Jing Wu, K. N. Hui, Lei Li & Y. R. Cho

  2. Department of Mechanical Convergence Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Republic of Korea

    K. S. Hui

  3. Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan, 609-735, Republic of Korea

    Ho-Hwan Chun

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  1. Jing Wu
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  2. K. S. Hui
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Correspondence to K. S. Hui, K. N. Hui or Y. R. Cho.

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Wu, J., Hui, K.S., Hui, K.N. et al. Characterization of Sn-doped CuO thin films prepared by a sol–gel method. J Mater Sci: Mater Electron 27, 1719–1724 (2016). https://doi.org/10.1007/s10854-015-3945-8

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  • DOI: https://doi.org/10.1007/s10854-015-3945-8

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