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Planar microcrystalline ZnO/Si heterojunction photodetector with Al electrodes

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Abstract

The fabrication of planar Al/ZnO/Si heterojunction photodetectors has received considerable attention. The crystalline quality of ZnO plays an important role in the properties of the fabricated device. In this study, ZnO micro-rods were grown on Si (100) without any catalysts using atmospheric pressure chemical vapor deposition, and were characterized to determine their potential for application in highly photosensitive ZnO/Si photodetectors. The ZnO rods were grown with various diameters and had a wurtzite structure oriented in the (002) plane. The effect of the substrate temperature on the crystalline structure was studied in the range of 450–750 °C. The planar structure of the Al/ZnO heterojunction photodetector indicated that the device is highly sensitive to ultraviolet and visible light. The photoresponse of the fabricated Al/ZnO device had a peak at 360 nm. The responsivity of the device reached 0.03 at a bias voltage of 1 V and reached 0.085 at a bias voltage of 5 V. The responsivity increased to 0.121 as the bias voltage increased to 10 V. The quantum efficiency of the device was 11, 32, and 42 % at bias voltages of 1, 5, and 10 V, respectively.

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Acknowledgments

The authors gratefully acknowledge the support from Department of Physics, College of Science at the University of Slahaddin. The authors are also grateful to Dr. Naser M. Ahmed Al-rawi for assistance with the FESEM, EDX, and XRD measurements.

Conflict of interest

The authors declare that they have no conflict of interest.

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Authors and Affiliations

  1. Department of Physics, College of Science, Salahaddin University, Erbil, Kurdistan, Iraq

    Y. M. Hassan & Sh. A. Kakil

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  1. Y. M. Hassan
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  2. Sh. A. Kakil
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Correspondence to Y. M. Hassan.

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Hassan, Y.M., Kakil, S.A. Planar microcrystalline ZnO/Si heterojunction photodetector with Al electrodes. J Mater Sci: Mater Electron 26, 6092–6098 (2015). https://doi.org/10.1007/s10854-015-3187-9

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  • DOI: https://doi.org/10.1007/s10854-015-3187-9

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