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Synthesis of ZnO nanorods using different precursor solutions and their two terminal device characterization

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Abstract

ZnO nanostructures such as nanoparticles, nanorods, nanotubes and nanoplates were prepared by the novel chemical solution route using different combinations of precursors such as zinc nitrate [Zn(NO3)2·6H2O] and sodium hydroxide [NaOH], zinc nitrate [Zn(NO3)2·6H2O] and hexamethylenetetramine (HMT) (C6H12N4), and zinc acetate [Zn(CH3COO)2·2H2O] and NaOH at low temperature. The effects of temperature and bath concentration for the synthesis of various ZnO nanostructures have been studied. Synthesized powders were characterized by X-ray diffraction, scanning electron microscope and photoluminescence. The crystalline structure, size and shape of the synthesized particles have been analyzed. Energy band gap values and photoluminescence emissions of the nanostructures were found to change according to the kind of the particles. Rod shaped ZnO have been obtained from the combination of zinc nitrate and HMT. The synthesized ZnO nanorods were aligned between lithographically patterned finger type metal contacts and their current–voltage response were measured.

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Authors and Affiliations

  1. Millimeter-Wave Innovation Technology (MINT) Research Center, Dongguk University, Seoul, 100-715, South Korea

    A. Kathalingam

  2. Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 100-715, South Korea

    Hyun-Chang Park, Sam-Dong Kim & Hyun-Seok Kim

  3. Department of Electrical Engineering (SEES), CINVESTAV-IPN, Avenida IPN, 6508, San Pedro Zacatenco, D.F., Mexico

    S. Velumani

  4. Department of Electrical and Computer Engineering, Ajou University, Suwon, 443-749, South Korea

    T. Mahalingam

Authors
  1. A. Kathalingam
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  2. Hyun-Chang Park
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  3. Sam-Dong Kim
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  4. Hyun-Seok Kim
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  5. S. Velumani
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  6. T. Mahalingam
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Correspondence to A. Kathalingam.

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Kathalingam, A., Park, HC., Kim, SD. et al. Synthesis of ZnO nanorods using different precursor solutions and their two terminal device characterization. J Mater Sci: Mater Electron 26, 5724–5734 (2015). https://doi.org/10.1007/s10854-015-3129-6

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  • DOI: https://doi.org/10.1007/s10854-015-3129-6

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