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Effect of film orientation on the dielectric properties of bismuth magnesium niobate thin films prepared by RF magnetron sputtering

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Abstract

The Bi1.5MgNb1.5O7 (BMN) thin films were deposited on Si (1 0 0) and Si (1 1 1) substrate by RF magnetron sputtering. The dielectric properties of BMN thin films on different substrate were investigated. The BMN thin film on Si (1 1 1) substrate shows (1 1 1) preferred orientation, while the BMN thin film on Si (1 0 0) exhibits nearly random orientation. The BMN thin film prepared on Si (1 1 1) substrate exhibits the dielectric constant of 110, low tangent loss of 0.003, and maximum tunability of 38.3 % at 1.5 MV/cm, which is better than that on Si (1 0 0) substrate. The results suggest that the orientation of substrate has a great influence on the dielectric properties of BMN thin films.

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Acknowledgments

This work was supported by Program for New Century Excellent Talents in University (NCET), 863 programs (2007AA03Z423) and China Postdoctoral Science Foundation.

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Authors and Affiliations

  1. Department of Electronic and Information Engineering, Tianjin University, 92 Weijin Road, Tianjin, 300072, People’s Republic of China

    Lingxia Li, Dan Xu, Ning Zhang, Shihui Yu, Helei Dong & Yuxin Jin

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  1. Lingxia Li
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  2. Dan Xu
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Correspondence to Lingxia Li.

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Li, L., Xu, D., Zhang, N. et al. Effect of film orientation on the dielectric properties of bismuth magnesium niobate thin films prepared by RF magnetron sputtering. J Mater Sci: Mater Electron 26, 288–293 (2015). https://doi.org/10.1007/s10854-014-2397-x

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