Journal of Materials Science: Materials in Electronics

, Volume 20, Supplement 1, pp 107–110

Photo-induced transformations in amorphous chalcogenide nano-multilayers

Authors

    • Institute of PhysicsUniversity of Debrecen
  • Dezso L. Beke
    • Institute of PhysicsUniversity of Debrecen
  • Kanatinkal S. Sangunni
    • Department of PhysicsIndian Institute of Science
  • Viktor Takats
    • Institute of PhysicsUniversity of Debrecen
  • Attila Csik
    • Institute of PhysicsUniversity of Debrecen
  • Lajos Daroczi
    • Institute of PhysicsUniversity of Debrecen
Article

DOI: 10.1007/s10854-007-9460-9

Cite this article as:
Kokenyesi, S., Beke, D.L., Sangunni, K.S. et al. J Mater Sci: Mater Electron (2009) 20: 107. doi:10.1007/s10854-007-9460-9

Abstract

Photo-stimulated interdiffusion in a-Se/As2S3 amorphous chalcogenide nano-multilayers (ANML) is known as a useful method for amplitude-phase optical relief formation besides the known amorphous–amorphous or amorphous–crystalline photo-induced structural transformations (PST) in homogeneous chalcogenide layers, but it has a relatively narrow sensitivity spectral range and small amplitude modulation. Experimental evidences of improvement of optical recording processes were obtained in Te-, Bi-, Sb-containing nano-layered structures based on As2S3 matrix. The influence of nano-structuring and combination of components on the sensitivity, type of the recorded relief is discussed.

Copyright information

© Springer Science+Business Media, LLC 2007