Article

Journal of Materials Science: Materials in Electronics

, Volume 20, Issue 1, pp 107-110

Photo-induced transformations in amorphous chalcogenide nano-multilayers

  • Sandor KokenyesiAffiliated withInstitute of Physics, University of Debrecen Email author 
  • , Dezso L. BekeAffiliated withInstitute of Physics, University of Debrecen
  • , Kanatinkal S. SangunniAffiliated withDepartment of Physics, Indian Institute of Science
  • , Viktor TakatsAffiliated withInstitute of Physics, University of Debrecen
  • , Attila CsikAffiliated withInstitute of Physics, University of Debrecen
  • , Lajos DarocziAffiliated withInstitute of Physics, University of Debrecen

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Abstract

Photo-stimulated interdiffusion in a-Se/As2S3 amorphous chalcogenide nano-multilayers (ANML) is known as a useful method for amplitude-phase optical relief formation besides the known amorphous–amorphous or amorphous–crystalline photo-induced structural transformations (PST) in homogeneous chalcogenide layers, but it has a relatively narrow sensitivity spectral range and small amplitude modulation. Experimental evidences of improvement of optical recording processes were obtained in Te-, Bi-, Sb-containing nano-layered structures based on As2S3 matrix. The influence of nano-structuring and combination of components on the sensitivity, type of the recorded relief is discussed.