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Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element

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Abstract

Micro-Hall sensors with high sensitivity, low noise, and high thermal stability, 5 μm square, are fabricated using pseudomorphic Al0.3Ga0.7As/GaAs/In y Ga1-y As (0.2 ≤ y ≤ 0.3) heterostructures with Si-doped channels. The structures were optimized for thermal stability using a calculation of the self-consistent solution of Schrödinger-Poisson equations and Fermi-Dirac statistics in Hartree approximation. The optimized structure based on a Si-δ-doped 144 Å In0.2Ga0.8As quantum well embedded into uniformly doped GaAs channel showed thermal drifts of only 90 ppm·K−1 in current drive mode and 192 ppm K−1 in voltage drive mode. The measurements of the absolute magnetic sensitivity and the low frequency noise were done. The micro-Hall sensor, optimized for thermal drift, is able to resolve the magnetic field of 438 nT.

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Acknowledgements

The authors are indebted to B. Herrmann for Hall measurements and A. Ridel for technical assistance in device processing. This work was supported by the DFG Grant No. MA 1749/4-1(2) and by the National Science Foundation under Grant No. DMR-0520550.

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Authors and Affiliations

  1. Department of Physics, University of Arkansas, Fayetteville, 72701, USA

    Vasyl P. Kunets, Julia Dobbert, Yuriy I. Mazur & Gregory J. Salamo

  2. Department of Physics, Humboldt-Universität zu Berlin, Newtonstrasse 15, 12489, Berlin, Germany

    Uwe Müller & W. T. Masselink

  3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117, Berlin, Germany

    Helmar Kostial & Evi Wiebicke

Authors
  1. Vasyl P. Kunets
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  2. Julia Dobbert
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  3. Yuriy I. Mazur
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  4. Gregory J. Salamo
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  5. Uwe Müller
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  6. W. T. Masselink
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  7. Helmar Kostial
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  8. Evi Wiebicke
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Correspondence to Vasyl P. Kunets.

Additional information

J. Dobbert is a visiting scholar from the Department of Physics, Humboldt-Universität zu Berlin.

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Kunets, V.P., Dobbert, J., Mazur, Y.I. et al. Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element. J Mater Sci: Mater Electron 19, 776–782 (2008). https://doi.org/10.1007/s10854-007-9408-0

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  • DOI: https://doi.org/10.1007/s10854-007-9408-0

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