Skip to main content
SpringerLink
Log in

Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor

  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

The melt-quenched Sn10Sb20Se70 sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction study shows the crystallization of Sb2Se3 phase in the major proportion as compared to the SnSe2 phase. The SEM images film of the show the appearance of spherical globules upon annealing below the glass transition temperature. The effect of annealing temperature on the electrical and optical properties has been studied. A linear fit between ΔE and Eo is observed, indicating the validity of Meyer–Neldel rule with the change in the annealing temperature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  1. Wang F, Boolchand P (2004) In: Lucovsky G, Popescu M (eds) Non-crystalline materials for optoelectronics, vol 1. INOE, Romania

  2. Wang Z, Tu C, Li Y, Chen Q (1995) J Non-Cryst Solids 191:132. doi:https://doi.org/10.1016/0022-3093(95)00249-9

    Article  CAS  Google Scholar 

  3. Klocek P, Roth M, Rock RD (1987) Opt Eng 26:88

    Article  CAS  Google Scholar 

  4. Kumar P, Thangaraj R (2006) J Non-Cryst Solids 352:2288. doi:https://doi.org/10.1016/j.jnoncrysol.2006.02.041

    Article  CAS  Google Scholar 

  5. Kumar P, Bindra KS, Suri N, Thangaraj R (2006) J Phys D Appl Phys 39:642. doi:https://doi.org/10.1088/0022-3727/39/4/008

    Article  CAS  Google Scholar 

  6. Mehta N, Agarwal P, Kumar A (2005) Eur Phys J Appl Phys 31:153. doi:https://doi.org/10.1051/epjap:2005048

    Article  CAS  Google Scholar 

  7. Lasocka M (1976) Mater Sci Eng 23:173. doi:https://doi.org/10.1016/0025-5416(76)90189-0

    Article  CAS  Google Scholar 

  8. Tichy L, Rysava N, Trisk A, Ticha H, Klikorka J (1984) Sol Stat Commun 49:903. doi:https://doi.org/10.1016/0038-1098(84)90451-4

    Article  CAS  Google Scholar 

  9. Kissinger HE (1956) J Res Natl Bur Stand 57:217

    Article  CAS  Google Scholar 

  10. Mott NF, Davis EA (1979) Electronic processes in non-crystalline materials. Clarendon, Oxford

    Google Scholar 

  11. Mohamed SH, Kappertz O, Niemeier T, Drese R, Wakkad MM, Wuttig M (2004) Thin Solid Films 468:48. doi:https://doi.org/10.1016/j.tsf.2004.04.017

    Article  CAS  Google Scholar 

  12. Shimakawa K, Abdel-Waheb F (1997) Appl Phys Lett 70:652. doi:https://doi.org/10.1063/1.118323

    Article  CAS  Google Scholar 

  13. Yalon A, Movaghar B, Crandall RS (2006) Rep Prog Phys 69:1145. doi:https://doi.org/10.1088/0034-4885/69/4/R04

    Article  Google Scholar 

  14. Roberts GG (1971) J Phys C Solid State 4:3167. doi:https://doi.org/10.1088/0022-3719/4/18/021

    Article  CAS  Google Scholar 

  15. Kuzukawa Y, Ganjoo A, Shimakawa K (1998) J Non-Cryst Solids 227–230:715. doi:https://doi.org/10.1016/S0022-3093(98)00192-6

    Article  Google Scholar 

  16. El Zahed H (2001) Physica B (Amsterdam) 307:95. doi:https://doi.org/10.1016/S0921-4526(01)00644-5

    Article  CAS  Google Scholar 

  17. Mohamed SH, Wakkad MM, Ahmed AM, Diab AK (2006) Eur Phys J Appl Phys 34:165. doi:https://doi.org/10.1051/epjap:2006061

    Article  CAS  Google Scholar 

  18. Moharram AH (2004) Appl Phys A 66:515. doi:https://doi.org/10.1007/s003390050706

    Article  Google Scholar 

Download references

Acknowledgements

The authors wish to thank Mr. Jagtar Singh, Sophisticated Analytical Instrumentation Facility (SAIF), Punjab University, Chandigarh, and Mr. Jagdish Singh, Scientific Officer, Institute Instrumentation Center, IIT, Roorkee, for their timely help in the XRD and DSC studies, respectively.

Author information

Authors and Affiliations

  1. Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar, 143005, India

    Praveen Kumar & R. Thangaraj

  2. Department of Physics, University of Botswana, Gaborone, Botswana

    T. Stephen Sathiaraj

Authors
  1. Praveen Kumar
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Thangaraj
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. Stephen Sathiaraj
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to R. Thangaraj.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kumar, P., Thangaraj, R. & Stephen Sathiaraj, T. Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor. J Mater Sci 43, 6099–6104 (2008). https://doi.org/10.1007/s10853-008-2948-8

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10853-008-2948-8

Keywords

Search

Navigation