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Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O3 radiation and low temperature annealing

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Abstract

High performance thin film transistors (TFTs) based on amorphous In-Sn-Ga-O (ITGO) semiconductor were fabricated. In order to activate the electrical properties of the oxide semiconductor, different processes were used, involving thermal annealing, UV + O3 (UVO) radiation, and UVO-assisted thermal annealing. While either UV radiation or thermal annealing at 150 °C results in rather poor transfer characteristics, the combination of both allows the fabrication of high performance devices with field effect mobility values exceeding 20 cm2/Vs. X-ray photoelectron spectroscopy (XPS) analyses of ITGO films suggest that the density of defects related to oxygen-deficient sites are reduced upon UVO-assisted annealing. Also, hydroxide bonds are found to increase in the semiconductor material, which is highly likely to increase the free carrier concentration. The reduction of oxygen-related defects results in a decrease in charge trap density near the semiconductor/gate dielectric interface, and the UV-assisted annealed ITGO devices exhibit relatively small shifts in the threshold voltage (Vth) under positive bias stress.

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Acknowledgments

This research was partially supported by Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3A6B1078870). Also, it was partially supported by the Industry Technology R&D program of MOTIE/KEIT [10051080, Development of mechanical UI device core technology for small and medium-sized flexible display]. Specially, authors thank to Dr. Junhyung Lim (Samsung Display Co.) and Dr. Johann Cho (Samsung Corning Advanced Glass) to support ITGO sputter target for this work.

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Authors and Affiliations

  1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro Seondong-gu, Seoul, 04763, South Korea

    Hyun-Jun Jeong, Hyun-Mo Lee & Jin-Seong Park

  2. Department of Information Display, Hanyang University, 222 Wangsimni-ro Seondong-gu, Seoul, 04763, South Korea

    Keun-Tae Oh & Jin-Seong Park

  3. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea

    Jozeph Park

  4. Current affiliation is R&D Center, Samsung Display, Yongin, 17113, Republic of Korea

    Jozeph Park

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  1. Hyun-Jun Jeong
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  2. Hyun-Mo Lee
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  3. Keun-Tae Oh
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  4. Jozeph Park
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  5. Jin-Seong Park
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Correspondence to Jozeph Park or Jin-Seong Park.

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Jeong, HJ., Lee, HM., Oh, KT. et al. Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O3 radiation and low temperature annealing. J Electroceram 37, 158–162 (2016). https://doi.org/10.1007/s10832-016-0053-y

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  • DOI: https://doi.org/10.1007/s10832-016-0053-y

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