Abstract
Flexible thin-film transistors (TFTs) incorporating In-Ga-Zn-O (IGZO) as the active layer were fabricated on polyimide substrates. The electrical properties and device stability were evaluated before and after detaching the polyimide from the carrier glass. The TFT performance and reliability under negative bias illumination stress (NBIS) degrade considerably once the polyimide film is separated from the rigid glass substrate. It is suggested that mechanical strain induces the formation of excess oxygen vacancies in the IGZO semiconductor, and these become ionized upon illumination to act as net positive charge traps during the NBIS measurements.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S.H. Jeon, S.E. Ahn, I.H. Song, C.J. Kim, U.I. Chung, E.H. Lee, I.K. Yoo, A. Nathan, S.S. Lee, K. Ghaffarzadeh, J. Robertson, K.N. Kim, Nat. Mater. 11, 301 (2012)
H.-S. Kim, S.H. Jeon, J.S. Park, T.S. Kim, K.S. Son, J.-B. Seon, S.-J. Seo, S.-J. Kim, E. Lee, J.G. Chung, H. Lee, S. Han, M. Ryu, S.Y. Lee, K. Kim, Sci. Rep. 3, 1459 (2013)
K. Ahadi, A. Nemati, S.-M. Mahdavi, Mater. Lett. 83, 124 (2012)
K. Ahadi, S.-M. Mahdavi, A. Nemati, J. Mater. Sci. Mater. Electron. 24, 248 (2013)
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Nature (London) 432, 488 (2004)
J.S. Park, W.-J. Maeng, H.-S. Kim, J.-S. Park, Thin Solid Films 520, 1679 (2012)
J.-S. Park, H. Kim, I.-D. Kim, J. Electroceram. 32, 117 (2014)
K.H. Cherenack, N.S. Münzenrieder, G. Tröster, IEEE Electron. Device Lett. 31, 11 (2010)
H. Xu, J. Pang, M. Xu, M. Li, Y. Guo, Z. Chen, L. Wang, J. Zou, H. Tao, L. Wang, J. Peng, ECS J. Solid State Sci. Technol. 3, Q3035 (2014)
H. Hosono, J. Non-Cryst. Solids 352, 851 (2006)
M.J. POWELL, IEEE Trans. Electron Devices 36, 12 (1989)
K.H. Lee, J.S. Jung, K.S. Son, J.S. Park, T.S. Kim, R. Choi, J.K. Jeong, J.Y. Kwon, B.W. Koo, S.Y. Lee, Appl. Phys. Lett. 95, 232106 (2009)
S.J. Hong, S.H. Lee, M. Mativenga, J. Jang. IEEE Electron Device Lett. 35, 1 (2014)
G.J. Lee, J.W. Kim, J.H. Kim, S.M. Jeong, J.E. Jang, J.W. Jeong, Semicond. Sci. Technol. 29, 035003 (2014)
K.C. Ok, S.H.K. Park, C.S. Hwang, H. Kim, H.S. Shin, J.G. Bae, J.-S. Park, Appl. Phys. Lett. 104, 063508 (2014)
K.C. Ok, S. Oh, H.-J. Jeong, J.U. Bae, J.-S. Park, IEEE Electron. Device Lett. 36, 917 (2015)
S.M. Sze, K.K. Ng. Physics of semiconductor devices, 3rd Ed., Wiley-Interscience (2006)
C.Y. Lin, C.W. Chien, C.C. Wu, Y.H. Yeh, C.C. Cheng, C.M. Lai, M.J. Yu, C.M. Leu, T.M. Lee, IEEE Trans. Electron. Devices 59, 1956 (2012)
K.J. Lee, J.S. Lee, H.D. Hwang, Z.J. Reitmeier, R.F. Davis, J.A. Rogers, R.G. Nuzzo, Small 1, 1164 (2005)
A. Ralland, J. Richard, J.P. Kleider, D. Mencaraglia, J. Electrochem. Soc. 140, 12 (1993)
J.H. Shin, J.S. Lee, C.S. Hwang, S.H.K. Park, W.S. Cheong, M.K. Ryu, C.W. Byun, J.I. Lee, H.Y. Chu. Etri j. 31, 1 (2009)
J.H. Jeon, J.H. Kim, M.K. Ryu, J. Korean Phys. Soc. 58, 158 (2011)
B.K. Ryu, H.K. Noh, E.A. Choi, K.J. Chang, Appl. Phys. Lett. 97, 022108 (2010)
K. Ghaffarzadeh, A. Nathan, J. Robertson, S.W. Kim, S.H Jeon, C.J. Kim, U.I. Chung, J.H. Lee. Appl. Phys. Lett. 97, 113504 (2010)
H.H. Nahm, Y.S. Kim, D.H. Kim, Phys. Status Solidi B 249, 1277 (2012)
Acknowledgments
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No: 2014R1A1A2055138).
Author information
Authors and Affiliations
Corresponding authors
Additional information
Jozeph Park and Chang-Sun. Kim contributed equally to this work.
Rights and permissions
About this article
Cite this article
Park, J., Kim, CS., Du Ahn, B. et al. Flexible In-Ga-Zn-O thin-film transistors fabricated on polyimide substrates and mechanically induced instability under negative bias illumination stress. J Electroceram 35, 106–110 (2015). https://doi.org/10.1007/s10832-015-0001-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10832-015-0001-2