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The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure

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Abstract

This paper addresses changes in device performance for GeGaInOx (GGIO) thin film transistors deposited as a function of process pressures, and the mechanisms responsible for electronic band structure and defect states within sub-gap states. As the process pressure decreased from 5 to 1 mTorr during sputtering of the GGIO active layer, the saturation mobility increased from 6.51 to 11.18 cm2/Vs and the sub-threshold swing value decreased from 0.64 to 0.21 V/decade. Conduction band areas measured by x-ray absorption spectroscopy in GGIO films increased as the total process pressure decreased from 5 to 1 mTorr, which can help charge transport in GGIO semiconductors. In addition, the ΔVth shift during positive bias temperature stability for 3 h was also enhanced from 17.5 to 6.2 V. This improvement can be attributed to the reduction of relative near conduction band edge defect states, which was found in not only at the GGIO films level by spectral ellipsometry, but also at the device level by the Meyer-Neldel rule.

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References

  1. J.S. Park, H. Kim, I.D. Kim, J. Electroceram. 32, 117 (2014)

    Article  Google Scholar 

  2. J.S. Park, W.J. Maeng, H. Kim, J.S. Park, Thin Solid Film 520, 1679 (2012)

    Article  Google Scholar 

  3. J.S. Park, K. Kim, Y. Park, Y.G. Mo, H.D. Kim, J.K. Jeong, Adv. Mater. 21, 329 (2009)

    Article  Google Scholar 

  4. R.A. Street, Adv. Mater. 21, 2007 (2009)

    Article  Google Scholar 

  5. S.I. Kim, C.J. Kim, J.C. Park, I. Song, S.W. Kim, H. Yin, E. Lee, J.C. Lee, Y. Park, Electron. Devices Meet. IEEE Int. 2008, 1 (2008)

    Google Scholar 

  6. J. Park, K.S. Son, T.S. Kim, J.S. Jung, K. Lee, W.J. Meang, H. Kim, E.S. Kim, K. Park, J. Son, J. Kwon, M.K. Ryu, S. Lee, IEEE Elect. Dev. Lett. 31, 960 (2010)

    Article  Google Scholar 

  7. Y.S. Rim, W. Jeong, B.D. Ahn, H.J. Kim, Appl. Phys. Lett. 102, 143503 (2013)

    Article  Google Scholar 

  8. J.H. Jeong, H.W. Yang, J.S. Park, J.K. Jeong, Y.G. Mo, H.D. Kim, J. Song, C.S. Hwang, Electrochem. Solid-State Lett. 11, H157 (2008)

    Article  Google Scholar 

  9. S. Yasuno, T. Kita, A. Hino, S. Morita, K. Hayashi, T. Kugimiya, J. Appl. Phys. 52, 03BA01 (2013)

    Article  Google Scholar 

  10. K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, H. Hosono, Phys. Rev. B 75, 035212 (2007)

    Article  Google Scholar 

  11. T. Kamiya, K. Nomura, M. Hirano, H. Hosono, Phys. Status Solidi C 5, 3098 (2008)

    Article  Google Scholar 

  12. Y. Kim, M. Bae, W. Kim, D. Kong, H.K. Jeong, H. Kim, S. Choi, D.M. Kim, D.H. Kim, IEEE Trans. Electron. Devices 59, 2689 (2012)

    Article  Google Scholar 

  13. R.B.M. Cross, M.M. De Souza, Investigating the stability of zinc oxide thin film transistors. Appl. Phys. Lett. 89, 263513 (2006)

    Article  Google Scholar 

  14. J.M. Lee, I.T. Cho, J.H. Lee, H.I. Kwon, Appl. Phys. Lett. 93, 093504 (2008)

    Article  Google Scholar 

  15. A. Suresh, J.F. Muth, Appl. Phys. Lett. 92, 033502 (2008)

    Article  Google Scholar 

  16. S.Y. Lee, S.J. Kim, Y.W. Lee, W.G. Lee, K.S. Yoon, J.Y. Kwon, M.K. Han, IEEE Electron. Device Lett. 33, 218 (2012)

    Article  Google Scholar 

  17. S. Yang, D.H. Cho, M.K. Ryu, S.H.K. Park, C.S. Hwang, J. Jang, J.K. Jeong, Appl. Phys. Lett. 96, 213511 (2010)

    Article  Google Scholar 

  18. K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, H. Hosono, Appl. Phys. Lett. 92, 202117 (2008)

    Article  Google Scholar 

  19. B.D. Ahn, H.S. Shin, H.J. Kim, J.S. Park, J.K. Jeong, Appl. Phys. Lett. 93, 203506 (2008)

    Article  Google Scholar 

  20. K.B. Chung, J.P. Long, H. Seo, G. Lucovsky, D. Nordlund, J. Appl. Phys. 106, 074102 (2009)

    Article  Google Scholar 

  21. D.Y. Cho, J.W. Song, K.D. Na, C.S. Hwang, J.H. Jeong, J.K. Jeong, Y.G. Mo, Appl. Phys. Lett. 94, 112112 (2009)

    Article  Google Scholar 

  22. M.K. Ryu, S.H. Yang, S.H.K. Park, C.S. Hwang, J.K. Jeong, Appl. Phys. Lett. 95, 072104 (2009)

    Article  Google Scholar 

  23. C. Chen, K. Abe, H. Kumomi, J. Kanicki, IEEE Trans. Electron. Devices 56, 1177 (2009)

    Article  Google Scholar 

  24. K.H. Ji, J.I. Kim, H.Y. Jung, S.Y. Park, Y.G. Mo, J.H. Jeong, J.Y. Kwon, M.K. Ryu, S.Y. Lee, R. Choi, J.K. Jeong, J. Electrochem. Solid State 157, H983 (2010)

    Google Scholar 

  25. E.J. Meijer, N. Matters, P.T. Herwig, D.M. de Leeuw, T.M. Klapwijk, Appl. Phys. Lett. 76, 3433 (2000)

    Article  Google Scholar 

  26. R.E.I. Schropp, J. Snijder, J.F. Verwey, J. Appl. Phys. 60, 643 (1986)

    Article  Google Scholar 

  27. K.H. Lee, K.C. Ok, H. Kim, J.S. Park, Ceram. Int. 40, 3215 (2014)

    Article  Google Scholar 

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Acknowledgments

This work was supported by the RFID R&D program of MKE/KEIT. [10035225, Development of core technology for high performance AMOLED on plastic].

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Authors and Affiliations

  1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea

    Byung Du Ahn

  2. Division of Physics and Semiconductor Science, Dongguk University, Seoul, 100-715, South Korea

    Kwun-Bum Chung

  3. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro Seongdong-gu, Seoul, 133-719, South Korea

    Jin-Seong Park

Authors
  1. Byung Du Ahn
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  3. Jin-Seong Park
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Correspondence to Jin-Seong Park.

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Du Ahn, B., Chung, KB. & Park, JS. The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure. J Electroceram 34, 229–235 (2015). https://doi.org/10.1007/s10832-014-9978-1

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  • DOI: https://doi.org/10.1007/s10832-014-9978-1

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