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Effect of Ti buffer layer on optical characteristic of Si3N4/SnZnO/AZO/Ag/Ti/ITO multi-layer film

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Abstract

Transparent electrodes are a necessary component in many modern devices such as touch screens, LCDs, OLEDs, and solar cells, all of which are growing in demand. In this study, transparent electrodes with the multiple repetition of basic [Si3N4/SnZnO/AZO/Ag/Ti/ITO] were fabricated using a RF/DC magnetron sputtering process, and their electrical, optical, and stability properties were systematically studied. In order to compare with experimental results, the Essential Macleod Program (EMP) was adopted. The multi-layer film shows a sheet resistance of 6.95 ohm/sq. and an average transmittance of 87 % in the visible range. An AFM image suggests that the Ti layer plays an important role in reducing the surface roughness and morphology change. With increasing annealing temperature, the sheet resistance of multi-layer films of [Si3N4/SnZnO/AZO/Ag//ITO], without a Ti layer suddenly increased to around 200 °C. On the other hand, a multi-layer film with a Ti buffer layer shows good thermal stability of up to 400 °C, showing higher electrical properties compared with multi-layer films without a Ti layer at 300 °C.

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Acknowledgements

This work was supported by a research grant of Chungbuk National University in 2013.

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Authors and Affiliations

  1. Department of Advanced Materials Engineering, Chungbuk National University, Cheong- ju, 361-763, Korea

    Sang Yun Lee, Yong An Kwon & Gun Eik Jang

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  1. Sang Yun Lee
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  2. Yong An Kwon
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  3. Gun Eik Jang
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Correspondence to Gun Eik Jang.

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Lee, S.Y., Kwon, Y.A. & Jang, G.E. Effect of Ti buffer layer on optical characteristic of Si3N4/SnZnO/AZO/Ag/Ti/ITO multi-layer film. J Electroceram 33, 121–127 (2014). https://doi.org/10.1007/s10832-014-9950-0

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  • DOI: https://doi.org/10.1007/s10832-014-9950-0

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