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Oxygen pressure dependence of Ti-doped In-Zn-O thin film transistors

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Abstract

Indium-Titanium-Zinc-Oxide (ITZO) thin film transistors (TFTs) with bottom gate structure were fabricated at various oxygen pressures by pulsed laser deposition (PLD). All the ITZO thin films are amorphous and exhibit relatively small surface roughness. The threshold voltage (V TH) and subthreshold swing (SS) decrease, and the field-effect mobility (μ sat) increases with increasing oxygen pressure from 15 to 35 mTorr. The TFT fabricated at 35 mTorr exhibits the best performances with low V TH of 3.53 V, largeμ satof 8.55 cm2V−1 s−1, small SS of 0.48 V/decade and high on/off current ratio of 1.54 × 108. These results suggest that the amorphous ITZO thin film is a promising candidate for the fabrication of transparent and flexible electronics.

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Acknowledgments

This work was partially supported by the Natural Science Foundation of Shandong Province (Grant No. ZR2011FM010 and ZR2012FM020).

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Authors and Affiliations

  1. College of Physics & Laboratory of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao, 266071, China

    A. Liu, Q. Zhang, G. X. Liu & F. K. Shan

  2. Electronic Ceramics Center, DongEui University, Busan, 614-714, South Korea

    Q. Zhang, F. K. Shan, W. J. Lee & B. C. Shin

  3. College of Chemical Engineering, Qingdao University, Qingdao, 266071, China

    J. Q. Liu

  4. Busan Center, Korea Basic Science Institute, Busan, 618-230, South Korea

    J. S. Bae

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  1. A. Liu
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  2. Q. Zhang
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  3. G. X. Liu
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  5. J. Q. Liu
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Correspondence to F. K. Shan or B. C. Shin.

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Liu, A., Zhang, Q., Liu, G.X. et al. Oxygen pressure dependence of Ti-doped In-Zn-O thin film transistors. J Electroceram 33, 31–36 (2014). https://doi.org/10.1007/s10832-014-9904-6

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  • DOI: https://doi.org/10.1007/s10832-014-9904-6

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