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New technique to extend the vertical depletion region at SOI-LDMOSFETs

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Abstract

In order to obtain an excellent performance for silicon-on-insulator lateral double-diffused MOSFET (SOI-LDMOSFET) transistors, we introduce a new technique to extend the depletion region along the vertical direction in the drift region. The proposed structure is called vertically depleted LDMOSFET (VD-LDMOSFET). The VD-LDMOSFET structure consists of a buried metal layer in the oxide region. The drift region of the VD-LDMOSFET is vertically depleted, not only from the buried oxide, but also by the incorporated metal layer in the buried oxide. Therefore, a higher drift doping density is achieved by an extension of the depletion region in the drift region and the on-state resistance \(({R}_{\mathrm{ON}})\) reduces without degradation of the breakdown voltage. Also, an additional peak is created in the electric field distribution of the proposed structure and causes a reduction of the electric field peak near the gate and the drift region junction at the top surface of the device. Therefore, the breakdown voltage \(({V}_{\mathrm{BR}})\) of the VD-LDMOSFET structure increases. The simulation results illustrate that by optimizing the doping density of the drift region and the dimensions of the metal layer in the proposed structure, the on-state resistance (28.9%) and the breakdown voltage (36.1%) are improved greatly and a superior tradeoff is achieved compared with a conventional SOI-LDMOSFET (C-LDMOSFET) structure.

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Authors and Affiliations

  1. Electrical and Computer Engineering Department, Semnan University, Semnan, Iran

    Hojjat Allah Mansoori, Ali A. Orouji & A. Dideban

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  1. Hojjat Allah Mansoori
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  2. Ali A. Orouji
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  3. A. Dideban
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Correspondence to Ali A. Orouji.

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Mansoori, H.A., Orouji, A.A. & Dideban, A. New technique to extend the vertical depletion region at SOI-LDMOSFETs. J Comput Electron 16, 666–675 (2017). https://doi.org/10.1007/s10825-017-0994-7

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  • DOI: https://doi.org/10.1007/s10825-017-0994-7

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