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Simulation of electronic noise in disordered organic semiconductor devices based on the master equation

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Abstract

Hopping transport in disordered organic semiconductors can be described by a master equation, where the hopping process is a Poisson process, which leads to a white local noise source. With a modified Ramo-Shockley theorem the terminal current noise can be calculated by the Langevin approach. A 1D structure of a homogeneous disordered organic semiconductor is investigated. Due to the slow processes in organic semiconductors, the noise shows a strong frequency dependence at rather low frequencies without considering 1/f noise or traps. If the current is determined by the injection barrier at the contact, the low frequency noise is shot noise at sufficiently large currents.

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  1. Chair of Electromagnetic Theory, RWTH Aachen University, 52056, Aachen, Germany

    Christoph Jungemann

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  1. Christoph Jungemann
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Correspondence to Christoph Jungemann.

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Jungemann, C. Simulation of electronic noise in disordered organic semiconductor devices based on the master equation. J Comput Electron 14, 37–42 (2015). https://doi.org/10.1007/s10825-014-0619-3

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  • DOI: https://doi.org/10.1007/s10825-014-0619-3

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