Abstract
In this paper we numerically examine the electrical characteristics of surrounding-gate strained silicon nanowire field effect transistors (FETs) by changing the radius (RSiGe) of silicon-germanium (SiGe) wire. Due to the higher electron mobility, the n-type FETs with strained silicon channel films do enhance driving capability (∼8% increment on the drain current) in comparison with the pure Si one. The leakage current and transfer characteristics, the threshold-voltage (V t ), the drain induced barrier height lowering (DIBL), and the gate capacitance (C G ) are estimated with respect to different gate length (L G ), gate bias (V G ), and RSiGe. For short channel effects, such as V t roll-off and DIBL, the surrounding-gate strained silicon nanowire FET sustains similar characteristics with the pure Si one.
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Li, Y., Lee, JW. & Chou, HM. Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors. J Comput Electron 3, 251–255 (2004). https://doi.org/10.1007/s10825-004-7056-7
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DOI: https://doi.org/10.1007/s10825-004-7056-7