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Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes

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Journal of Applied Spectroscopy Aims and scope

Microplasma breakdown luminescence of InGaN/GaN heterostructures in different types of high-power light emitting diodes is studied. It is shown that the spectrum of the breakdown luminescence, the luminescence onset voltage, the current in the first microplasma, and the number of microplasmas for a fixed voltage all correlate with the density of critical extended defects, the luminous flux, and the uniformity of current flow, and are determined by the type of substrate (Si, SiC, Al2O3).

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Authors and Affiliations

  1. V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauka Ave., 03028, Kyiv, Ukraine

    V. P. Veleschuk, A. I. Vlasenko & M. P. Kisselyuk

  2. Taras Shevchenko Kyiv National University, Kyiv, Ukraine

    O. V. Lyashenko

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  1. V. P. Veleschuk
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  2. A. I. Vlasenko
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  3. M. P. Kisselyuk
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  4. O. V. Lyashenko
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Correspondence to V. P. Veleschuk.

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 80, No. 1, pp. 121–127, January–February, 2013.

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Veleschuk, V.P., Vlasenko, A.I., Kisselyuk, M.P. et al. Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes. J Appl Spectrosc 80, 117–123 (2013). https://doi.org/10.1007/s10812-013-9730-7

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  • DOI: https://doi.org/10.1007/s10812-013-9730-7

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