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Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers

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Abstract

It is experimentally observed that the photocarrier radiometry (PCR) signals of silicon wafers are greatly enhanced by ion implantation and thermal annealing. A two-layer theoretical model is employed to analyze the experimental observation in detail. Theoretical simulations indicate that the increased optical-to-electronic quantum efficiency of the implanted layer could be the main photoluminescence mechanism contributing to the PCR signal enhancement. The decreased surface recombination velocity induced by surface electric field and the change of electronic transport properties of the implanted layer also contribute to the signal enhancement.

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Authors and Affiliations

  1. Key Laboratory of Optoelectronic Technology and System of Educational Ministry of China, Chongqing University, Chongqing, 400044, China

    Xianming Liu

  2. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu, 610209, Sichuan, China

    Xianming Liu, Bincheng Li & Qiuping Huang

Authors
  1. Xianming Liu
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  2. Bincheng Li
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  3. Qiuping Huang
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Correspondence to Bincheng Li.

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Liu, X., Li, B. & Huang, Q. Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers. Int J Thermophys 33, 2089–2094 (2012). https://doi.org/10.1007/s10765-012-1283-0

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  • DOI: https://doi.org/10.1007/s10765-012-1283-0

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