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InGaAs/GaAsSb/InP terahertz quantum cascade lasers

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Abstract

The development of In0.53Ga0.47As/GaAs0.51Sb0.49 terahertz quantum cascade lasers is reviewed, starting with the first demonstration, through growth direction dependent performance issues, to high performance devices. This InP-based material system is an attractive alternative to the almost exclusively used GaAs/AlxGa1-xAs. Devices achieve maximum operating temperatures of 142 K and exhibit broadband lasing over a range of 660 GHz. A special focus has to be put on the growth direction related interface asymmetry for this material system. Symmetric active region designs are an elegant technique to investigate such asymmetries. A significant impact on the device performance is observed and attributed to interface roughness scattering.

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Authors and Affiliations

  1. Photonics Institute and Center for Micro- and Nanostructures, Technische Universität Wien, Gusshausstrasse 27-29, 1040, Vienna, Austria

    Christoph Deutsch, Michael Krall, Martin Brandstetter & Karl Unterrainer

  2. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Technische Universität Wien, Floragasse 7, 1040, Vienna, Austria

    Hermann Detz, Tobias Zederbauer, Aaron M. Andrews, Pavel Klang, Werner Schrenk & Gottfried Strasser

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  1. Christoph Deutsch
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Correspondence to Christoph Deutsch.

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Deutsch, C., Detz, H., Zederbauer, T. et al. InGaAs/GaAsSb/InP terahertz quantum cascade lasers. J Infrared Milli Terahz Waves 34, 374–385 (2013). https://doi.org/10.1007/s10762-013-9991-5

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  • DOI: https://doi.org/10.1007/s10762-013-9991-5

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