Abstract
Square-law power detection circuits with on-chip antennas and amplifiers are presented for the detection of 0.65-THz radiation in a low-cost 0.25-μm CMOS technology. The circuit architecture combines metal-insulator-metal (MIM) coupling capacitors with NMOS transistors to facilitate self-mixing in a resistive mixer. A low-frequency (quasi-static) and a high-frequency (non-quasi-static) analysis of the broad-band circuit is presented. Current and voltage readout techniques of non-amplified detectors are compared, and exhibit a measured responsivity of 5.3 mA/W and 150 V/W respectively. A monolithic integrated 3×5 pixel focal-plane array has been used for single-pixel and multi-pixel imaging of concealed objects at 0.65 THz.
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Öjefors, E., Lisauskas, A., Glaab, D. et al. Terahertz Imaging Detectors in CMOS Technology. J Infrared Milli Terahz Waves 30, 1269–1280 (2009). https://doi.org/10.1007/s10762-009-9569-4
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DOI: https://doi.org/10.1007/s10762-009-9569-4