Abstract
0.1–3 GHz high isolation wideband CMOS Transmit/Receiver (T/R) switch is presented for software-defined radio (SDR) transceiver. The independent bias technique is proposed to keep the transistors in ideal ON/OFF mode to improve power handling capacity. The leakage cancellation technique with two matched paths is introduced to cancel the leakage from TX port to RX port. The proposed T/R switch has been implemented in 65 nm CMOS. The measured results show that the differential T/R switch achieves 23dBm 1-dB compression point (P1dB) and features 50–70 dB isolation.
References
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Acknowledgments
This work was supported in part by the National Science and Technology Major Projects of China under Grant 2012ZX03004007 and in part by the National Natural Science Foundation of China under Grant 61222405. The authors would like to acknowledge the market engineer Hongwen Yang at Rohde & Schwarz China for testing work.
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Zhang, X., Wang, Z. & Chi, B. High isolation wideband CMOS T/R switch with leakage cancellation technique for software-defined radio transceiver. Analog Integr Circ Sig Process 87, 93–99 (2016). https://doi.org/10.1007/s10470-016-0723-3
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DOI: https://doi.org/10.1007/s10470-016-0723-3