Abstract
This paper presents the design of a compact current mode curvature corrected bandgap voltage reference fabricated in a standard 0.35 μm 3.3 V CMOS technology. The measurement results show that the circuit generates 508.5 mV reference voltage while consuming 9.8 μA from a single 3.3 V supply. The achieved temperature coefficient is less then 10 ppm/°C over a temperature range from −40 to 130 °C after 8-bit trimming. The circuit operates down to 1.8 V with a line regulation of 781.2 ppm/V while its supply voltage changes from 1.8 to 3.6 V. The measured power supply rejection of the circuit is −65.2 dB at 100 Hz. The rms output noise voltage integrated within the frequency range of 0.1–10 Hz is 3.75 μV. The proposed circuit occupies an area of (350 × 250 μm2) 0.0875 mm2.
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References
Brokaw, A. P. (1974). A simple three-terminalV IC bandgap references. IEEE Journal of Solid State Circuits Society, 9, 388–393.
Rincon-Mora, G. A. (2001). Voltage references: From diodes to precision higher-order bandgap circuits. New York: Wiley.
Lee, I., Kim, G., & Kim, W. (1994). Exponential curvature compensated BiCMOS bandgap references. IEEE Journal of Solid-State Circuits, 29(11), 1396–1403.
Gunawan, M., Meijer, G. C. M., Fonderie, J., & Huijsing, J. H. (1993). A curvature-corrected low-voltage bandgap reference. IEEE Journal of Solid-State Circuits, 36(7), 667–670.
Rincon-Mora, G. A., & Allen, P. E. (1998). A 1.1-V current-mode and piecewise-linear curvature-corrected bandgap reference. IEEE Journal of Solid-State Circuits, 33(10), 1551–1554.
Malcovati, P., Maloberti, F., Fiocchi, C., & Pruzzi, M. (2001). Curvature-compensated BiCMOS bandgap with 1 V supply voltage. IEEE Journal of Solid-State Circuits, 36(7), 1076–1081.
Marinca, S., & O’Dwyer, T. (2008). Curvature Correction Method for a Bandgap Voltage Reference. In Proceedings of Signals and Systems Conference, (ISSC 2008) (pp. 134–137). June 2008.
Basyurt, P. B., & Aksin, D. Y. (2012). Design of curvature-corrected badngap reference with 7.5 ppm/°C temperature coefficient in 0.35 μm CMOS process. In Proceedings of IEEE International Symposium of Circuits and Systems (ISCAS) (pp. 3142–3145).
Banba, H., Shiga, H., Umezawa, A., Miyaba, T., Tanzawa, T., Atsumi, S., et al. (1999). A CMOS bandgap reference circuit with sub-1V operation. IEEE Journal of Solid State Circuits, 34(5), 670–674.
Tsividis, Y. P. (1980). Accurate analysis of temperature effects in \(I_{C}\)-\(V_{BE}\) characteristics with application to bandgap reference sources. IEEE Journal of Solid State Circuits, 15(6), 1076–1084.
Andreou, C. M., Koudounas, S., & Georgiou, J. (2012). A novel wide-temperature-range, 3.9 ppm/°C CMOS bandgap reference circuit. IEEE Journal of Solid-State Circuits, 47(2), 574–581.
Jing-Hu, L., Xing-bao, Z., & Ming-yan, Y. (2010). A 1.2 V piecewise curvature-corrected bandgap reference in 0.5 μm CMOS process. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 19(6), 1118–1122.
Perry, R. T., Lewis, S. H., Brokaw, A. P., & Viswanathan, T. R. (2007). A 1.4 V supply CMOS fractional bandgap reference. IEEE Journal of Solid-State Circuits, 42(10), 2180–2186.
Acknowledgments
This work is supported by The Scientific and Technological Research Council of Turkey with Project Number 109E075 and International Research Fellowship Programme-2214.
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Basyurt, P.B., Aksin, D.Y. A compact curvature corrected bandgap reference in 0.35 μm CMOS process. Analog Integr Circ Sig Process 83, 65–73 (2015). https://doi.org/10.1007/s10470-015-0503-5
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DOI: https://doi.org/10.1007/s10470-015-0503-5