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Over-voltage stressed dual-resonance injection-locked frequency divider with series-peaking injection device

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Abstract

Over-voltage RF stress was applied to an LC dual-resonance injection-locked frequency divider (ILFD) to study the post-stress ILFD RF performance. The LC ILFD was implemented in the TSMC 0.18 μm 1P6M CMOS process and it was stressed at the supply voltage of 2.3 V for 5 h. The dual-resonance ILFD has dual-band locking ranges and it uses series-peaking injection MOSFET. The over-voltage RF stress reduces both the high-frequency and low-frequency band locking ranges. The ILFD current consumption can decrease or increase with stress time, and this depends upon the stress condition. The phase noise in the injection-locked state can decrease with stress time.

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Acknowledgments

This work was supported by the National Science Council under Contract NSC NSC102-2221-E-011-147. The chip was fabricated by CIC.

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Authors and Affiliations

  1. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan ROC

    Jhin-Fang Huang, Sheng-Lyang Jang, Wen-Cheng Liu & Miin-Horng Juang

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  1. Jhin-Fang Huang
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  2. Sheng-Lyang Jang
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  3. Wen-Cheng Liu
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  4. Miin-Horng Juang
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Correspondence to Sheng-Lyang Jang.

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Huang, JF., Jang, SL., Liu, WC. et al. Over-voltage stressed dual-resonance injection-locked frequency divider with series-peaking injection device. Analog Integr Circ Sig Process 81, 789–795 (2014). https://doi.org/10.1007/s10470-014-0416-8

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  • DOI: https://doi.org/10.1007/s10470-014-0416-8

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