Abstract
This paper presents a study on a system comprised of a low-dimensional structure (Ga1-xAlxAs and GaAs quantum well wire), an intense laser field and an applied magnetic field in axial direction, resulting in a modified structure by interaction with the laser field. A variation of the concentration of aluminum is considered. So, the characteristics of the semiconductor such as the effective mass and width of the forbidden band vary due to the aluminum concentration. The electronic Landé factor control by changing of both intensity and frequency of a laser field on cylindrical quantum well wire was also reported. We use the laser dressed approximation for the treated “quantum wire + laser” system as quantum wire in the absence of radiation but with parameter (electronic barrier height and electronic effective mass) renormalized by laser effects. We consider a magnetic field applied in the parallel direction of symmetric axis of the quantum well wire. We take into account non-parabolicity and anisotropy effects on the conduction band by Ogg-McCombe Hamiltonian.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Zutic I, Fabian J, Das Sarma S (2004) Spintronics: fundamentals and applications. Rev Mod Phys 76:323–410
Brandi HS, Latgé A, Oliveira LE (1998) Laser-dressed-band approach to shallow-impurity levels of semiconductor heterostructures. Solid State Commun 107:31–34
Brandi HS, Latgé A, Oliveira LE (2001) Laser effects in semiconductor heterostructures within an extended dressed-atom approach. Physica B 302–303:64–71
Brandi HS, Latgé A, Oliveira LE (2001) Laser dressing effects in low-dimensional semiconductor systems. Solid State Commun 117:83–87
Brandi HS, Latgé A, Oliveira LE (2002) Laser efects in Semiconductor heterostructures within an extended dressed-atom approach. Braz J Phys 32:262–265
Bhowmik D, Bandyopadhyay S (2009) Gate control of the spin-splitting energy in a quantum dot: application in single qubit rotation. Physica E 41:587–592
Akahane K, Yamamoto N, Kawanishi T (2009). Fabrication of highly stacked quantum dot laser. Conference on Quantum electronics and Laser Science, 1–2, San José, CA
López FE, Reyes-Gómez H, Brandi HS, Porras-Montenegro N, Oliveira LE (2009) Laser-dressing effects on the electron g Factor in low-dimensional semiconductor systems under applied magnetic fields. J Phys D: Appl Phys 42:115304. doi:10.1088/0022-3727/42/11/115304
Reyes-Gómez E, Raigoza N, Oliveira LE (2008) Effects of hydrostatic pressure an aluminum concentration on the conduction-electron g Factor in GaAs-(Ga, Al)As quantum wells under in-plane magnetic fields. Phys Rev B 77:115308–115314
McCombe BO (1969) Infrared studies of combined resonance in n-type InSb. Phys Rev 181:1206
Ogg NR (1966) Conduction-band g Factor anisotropy in indium antimonide. Proc Phys Soc 89:431–442
Kane OE (1980) In narrow gap semiconductors. Physics and applications. In: Zawadzki W (ed), Lecture notes in physics, vol. 133. Springer, Berlin
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ramírez, I.M., Usma, J.I. & López, F.E. Simulation of laser radiation effects on low dimensionality structures. J Mol Model 19, 2091–2095 (2013). https://doi.org/10.1007/s00894-012-1658-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00894-012-1658-y