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Mechanical stress measurements using micro-Raman spectroscopy

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Abstract

 The application of micro-Raman spectroscopy for measurements of mechanical stress in silicon microelectronics devices is discussed. The advantages and disadvantages of the technique are shown through different examples such as Si3N4 and metal lines, isolation structures and solder bumps.

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  1. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, , , , , , BE

    I. De Wolf & H. E. Maes

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  1. I. De Wolf
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  2. H. E. Maes
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De Wolf, I., Maes, H. Mechanical stress measurements using micro-Raman spectroscopy. Microsystem Technologies 5, 13–17 (1998). https://doi.org/10.1007/s005420050134

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  • DOI: https://doi.org/10.1007/s005420050134

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