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Effect of electric potential into conductance silicon nanowire distribution

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Abstract

Distribution of electric potential and space charge in a silicon nanowire has been investigated. First, the model of the nanowire is generated with concern the physics and geometry. The physics of the nanowire has been modelled through set partial differential equations which were elucidated using finite element method. The simulation experiments by model compute distribution of potential, space charge and determined. The result nanowire by using COMSOL shows different dimension and affect that to space charge and electrical potential.

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Acknowledgments

The authors wish to extend their sincere appreciation to Universiti Malaysia Perlis (UniMAP) for giving the opportunities to use the research facilities in the Bio-chip Fabrication and characterization Lab and Ministry of Science, Technology and Innovation (MOSTI) for providing us with grant to carry out this research. The appreciation also goes to all the team members in the Institute of Nanoelectronic Engineering especially in the nano biochip research group.

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Authors and Affiliations

  1. Nano Structure Lab on Chip Research Group Institute Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000, Kangar, Perlis, Malaysia

    A. Wesam Al-Mufti, U. Hashim & Tijjani Adam

Authors
  1. A. Wesam Al-Mufti
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  2. U. Hashim
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  3. Tijjani Adam
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Correspondence to A. Wesam Al-Mufti.

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Wesam Al-Mufti, A., Hashim, U. & Adam, T. Effect of electric potential into conductance silicon nanowire distribution. Microsyst Technol 21, 693–697 (2015). https://doi.org/10.1007/s00542-014-2149-0

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  • DOI: https://doi.org/10.1007/s00542-014-2149-0

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