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Process development of a novel wafer level packaging with TSV applied in high-frequency range transmission

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Abstract

The process development of a novel wafer level packaging with TSV applied in high-frequency range transmission is presented. A specially designed TSV structure (a core TSV and six shielding TSVs) is adopted to connect the components on different sides of the high-resistivity silicon wafer. And the microstrip line in the microwave monolithic integrated circuit is used to transmit high-frequency signal in packaging structure together with the low permittivity intermediate dielectric polymer, benzocyclobutene. The TSV fabrication process and the multi-layer interconnection is illustrated in details. The electrical measurement result of the microstrip lines connected by TSVs reveals the resistances within 0.719 Ω, a return loss better than 23.8 dB and an insertion loss better than 2.60 dB from 14 to 40 GHz.

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Acknowledgments

This work is supported by National Major Fundamental Research Program of China (Grant No. 2009CB320207) and National Science and Technology Major Project—Research, Development and Industry of RDL/Embedding Wafer-Level Packaging and High-Density Bumping Technology (No. 2011ZX02602). The authors would also like to thank the support of Jiangsu Changjiang Electronics Technology Co., Ltd, Shanghai Anji Microelectronics Co., Ltd. and Shanghai Sinyang Semiconductor Materials Co., Ltd.

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Authors and Affiliations

  1. State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

    Xiao Chen, Jiajie Tang, Gaowei Xu & Le Luo

  2. Graduate School of Chinese Academy of Sciences, Beijing, China

    Xiao Chen & Jiajie Tang

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  1. Xiao Chen
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  2. Jiajie Tang
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  3. Gaowei Xu
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  4. Le Luo
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Correspondence to Xiao Chen.

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Chen, X., Tang, J., Xu, G. et al. Process development of a novel wafer level packaging with TSV applied in high-frequency range transmission. Microsyst Technol 19, 483–491 (2013). https://doi.org/10.1007/s00542-012-1712-9

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  • DOI: https://doi.org/10.1007/s00542-012-1712-9

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