Abstract
The monolithic integration of bulk-Si MEMS sensors and actuators using the Au–Au bonding technology is presented in this work. With this technology, the substrate isolation and electrical interconnection between the CMOS circuits and bulk-Si CMOS MEMS sensors are achieved perfectly. In order to demonstrate this technology, a pressure sensor and an electrothermal actuator have been monolithically designed and fabricated. In addition, by sputtering aluminium on the bulk silicon electrothermal actuator, the electrothermal actuator is modified and the sensitivity of the actuator is obviously improved. The measurement results show that the sensitivity of the pressure sensor is 0.29fF/hPa. And the sensitivities of the modified and non-modified electrothermal actuators are 20.23 μm/V and 3.34 μm/V, respectively. Compared with the non-modified electrothermal actuators, the sensitivity of the modified electrothermal actuators is improved by 6 times.
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Acknowledgments
This work is supported by the National Natural Science Foundation of China (61076071) and the National High Technology Research and Development Program of China (863 Program, 2011AA040404).
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Cai, C., Qin, M. The monolithic integration system of bulk-Si sensors and actuators based on the Au–Au bonding technology. Microsyst Technol 19, 195–201 (2013). https://doi.org/10.1007/s00542-012-1583-0
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DOI: https://doi.org/10.1007/s00542-012-1583-0