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Planar Er- and Yb-doped amplifiers and lasers

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Abstract

New results in erbium-doped planar waveguide amplifiers and lasers are presented. The waveguides are produced in silica-on-silicon technology using plasma-enhanced chemical vapor deposition. Waveguide propagation losses outside the erbium absorption band are improved to values below 0.05 dB/cm for a core–cladding index step of around 1.4%. Amplifier arrays show a net gain of more than 12 dB over the entire C-band.

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Authors and Affiliations

  1. COM, Technical University of Denmark, Orsteds Plads, Byg. 345v, 2800 Kgs. Lyngby, Denmark, DK

    J. Hübner, S. Guldberg-Kjaer & M. Dyngaard

  2. CISILIAS, Orsteds Plads, Byg. 345v, 2800 Kgs. Lyngby, Denmark, DK

    Y. Shen, C.L. Thomsen, S. Balslev, C. Jensen, D. Zauner & T. Feuchter

Authors
  1. J. Hübner
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  2. S. Guldberg-Kjaer
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  3. M. Dyngaard
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  4. Y. Shen
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  5. C.L. Thomsen
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  6. S. Balslev
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  7. C. Jensen
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  8. D. Zauner
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  9. T. Feuchter
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Additional information

Received: 13 June 2001 / Published online: 23 October 2001

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Hübner, J., Guldberg-Kjaer, S., Dyngaard, M. et al. Planar Er- and Yb-doped amplifiers and lasers. Appl Phys B 73, 435–438 (2001). https://doi.org/10.1007/s003400100697

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  • DOI: https://doi.org/10.1007/s003400100697

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