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AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier

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Abstract

An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 μm. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.

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Authors and Affiliations

  1. Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan

    Y.-F. Chen, Y. C. Lee, S. C. Huang, K. F. Huang & Y. F. Chen

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  1. Y.-F. Chen
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  2. Y. C. Lee
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  3. S. C. Huang
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  4. K. F. Huang
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Correspondence to Y. F. Chen.

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Chen, YF., Lee, Y.C., Huang, S.C. et al. AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier. Appl. Phys. B 106, 57–62 (2012). https://doi.org/10.1007/s00340-011-4669-y

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  • DOI: https://doi.org/10.1007/s00340-011-4669-y

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