Abstract
In this study, an analysis of temperature-dependent electrical characteristics of ZnPc/p-Si structure has been presented. Conduction mechanisms that are accounted for the organic/inorganic devices are evaluated. At low forward voltage, current–voltage (I–V) characteristics show ohmic behavior, limiting extraction of holes from p-Si over the ZnPc/p-Si heterojunction. Thermally activated conduction mechanism appears to be space-charge-limited conduction mechanism, taking into account the presence of an exponential trap distribution with total concentration of traps, N t of 5.77 × 1025 m−3. The series resistance is found to be temperature dependent. There is a critical point on the regime of series resistance at 200 K. The capacitance varies with temperature at different rates below and above room temperature, indicating a variation in the dielectric constant.
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Soylu, M., Al-Ghamdi, A.A. & Yakuphanoglu, F. Thermally activated conductivity of Si hybrid structure based on ZnPc thin film. Appl. Phys. A 122, 921 (2016). https://doi.org/10.1007/s00339-016-0450-8
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DOI: https://doi.org/10.1007/s00339-016-0450-8