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Positron annihilation measurements in high-energy alpha-irradiated n-type Gallium Arsenide

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Abstract

Positron annihilation lifetime spectroscopy and Doppler broadening annihilation line-shape measurements have been carried out in 40-MeV alpha-irradiated n-type GaAs. After irradiation, the sample has been subjected to an isochronal annealing over temperature region of 25–800 °C with an annealing time of 30 min at each set temperature. After each annealing, the positron measurements are taken at room temperature. Formation of radiation-induced defects and their recovery with annealing temperature are investigated. The lifetime spectra of the irradiated sample have been fitted with two lifetimes. The average positron lifetime τavg = 244 ps at room temperature after irradiation indicates the presence of defects, and the value of τ2 (262 ps) at room temperature suggests that the probable defects are mono-vacancies. Two distinct annealing stages in τavg at 400–600 °C and at 650–800 °C are observed. The variations in line-shape parameter (S) and defect-specific parameter (R) during annealing in the temperature region 25–800 °C resemble the behaviour of τavg indicating the migration of vacancies, formation of vacancy clusters and the disappearance of defects between 400 and 800 °C.

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Acknowledgments

The authors acknowledged the crew members of Variable Energy Cyclotron Centre (VECC) for irradiation experiments at Kolkata and Dr. D. Das, UGC-DAE Consortium for Scientific Research, Kolkata Centre, Kolkata-98, for providing the positron annihilation measurement facility. The work is sponsored by SERC Division, DST, Government of India, project No. SR/S2/CMP-57/2007.

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Authors and Affiliations

  1. Department of Physics, Visva-Bharati, Santiniketan, 731235, West Bengal, India

    Sandip Pan, Arunava Mandal & Asmita SenGupta

  2. Kolkata Centre, UGC-DAE Consortium for Scientific Research, Kolkata, 700098, West Bengal, India

    Anirban Roychowdhury

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  1. Sandip Pan
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  2. Arunava Mandal
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  3. Anirban Roychowdhury
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Correspondence to Asmita SenGupta.

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Pan, S., Mandal, A., Roychowdhury, A. et al. Positron annihilation measurements in high-energy alpha-irradiated n-type Gallium Arsenide. Appl. Phys. A 120, 221–227 (2015). https://doi.org/10.1007/s00339-015-9155-7

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  • DOI: https://doi.org/10.1007/s00339-015-9155-7

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