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Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents

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Abstract

Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (V S) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of V S. The dependence of V S on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.

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Acknowledgments

The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 103-2112-M-018-003-MY3) in the form of grants.

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Authors and Affiliations

  1. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan

    Wei-Shih Ni & Yow-Jon Lin

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  1. Wei-Shih Ni
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  2. Yow-Jon Lin
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Correspondence to Yow-Jon Lin.

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Ni, WS., Lin, YJ. Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents. Appl. Phys. A 119, 1127–1132 (2015). https://doi.org/10.1007/s00339-015-9079-2

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