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Efficiency enhancement of an InGaN light-emitting diode with a u-InGaN/AlInGaN superlattice last quantum barrier

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Abstract

In this study, a new design on last quantum barrier (LQB) is investigated numerically with the purpose of improving the optical performance of InGaN light-emitting diodes (LEDs). Through the analysis of the energy band diagrams, electrostatic fields, carrier concentrations, carrier current densities, and radiative recombination rates, we have got the simulation results that the proposed undoped-InGaN/AlInGaN superlattice (SL) LQB can significantly improve the output power and internal quantum efficiency, which is mainly attributed to the successful improvement in hole injection efficiency and suppression of electron current leakage. Moreover, the efficiency droop of the LEDs is improved slightly by using u-InGaN/AlInGaN SL as last barrier.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong (Grant No. 2012A080304016).

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Authors and Affiliations

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China

    Si-Ming Zeng, Guang-Han Fan, Shu-Wen Zheng, Jian-Yong Xiong & Tao Zhang

  2. Experimental Teaching Center, Guangdong University of Technology, Guangzhou, 510006, China

    Si-Ming Zeng

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  1. Si-Ming Zeng
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  2. Guang-Han Fan
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  3. Shu-Wen Zheng
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  4. Jian-Yong Xiong
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  5. Tao Zhang
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Correspondence to Guang-Han Fan.

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Zeng, SM., Fan, GH., Zheng, SW. et al. Efficiency enhancement of an InGaN light-emitting diode with a u-InGaN/AlInGaN superlattice last quantum barrier. Appl. Phys. A 119, 971–975 (2015). https://doi.org/10.1007/s00339-015-9053-z

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  • DOI: https://doi.org/10.1007/s00339-015-9053-z

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