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Evolution of terahertz conductivity in ZnSe nanocrystal investigated with optical-pump terahertz-probe spectroscopy

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Abstract

Ultrafast carrier dynamics and terahertz conductivity of ZnSe nanocrystal are investigated by means of the optical-pump terahertz-probe spectroscopy at room temperature. With the laser pulse excitation at 400 nm, the negative transmission of terahertz pulse shows an ultrafast rising followed by a biexponential recovery. The fast decay component with time constant of 5 ps is dominated by the photocarriers backscattering at interfaces of ZnSe nanoparticles, and the slow one with time constant longer than 1 ns can be assigned to the carrier recombination from band-to-band transition. The evolution of conductivity with time demonstrates that this kind of nanostructure is a good candidate for fabricating ultrafast terahertz switching.

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Acknowledgments

This research is supported by National Natural Science Foundation of China (11174195, 61107081, 61204105, and 61205081), Ph. D. Programs Foundation of Ministry of Education of China (20123108110003), and the Research Innovation Fund of the Shanghai Education Committee (14ZZ101).

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Authors and Affiliations

  1. Shanghai University of Electric Power, Shanghai, 200090, People’s Republic of China

    Gaofang Li, Sannan Yuan, Naiyun Tang, Fenghong Chu & Haoyang Cui

  2. Laboratory of Ultrafast Photonics, Department of Physics, Shanghai University, Shanghai, 200444, People’s Republic of China

    Xin Xue, Xian Lin & Guohong Ma

  3. Laboratory for Microstructures, Shanghai University, 99 Shangda Road, Shanghai, 200444, People’s Republic of China

    Guohong Ma

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  1. Gaofang Li
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Correspondence to Guohong Ma.

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Li, G., Xue, X., Lin, X. et al. Evolution of terahertz conductivity in ZnSe nanocrystal investigated with optical-pump terahertz-probe spectroscopy. Appl. Phys. A 116, 45–50 (2014). https://doi.org/10.1007/s00339-014-8481-5

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  • DOI: https://doi.org/10.1007/s00339-014-8481-5

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