Skip to main content
SpringerLink
Log in

Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

The Ba0.8Sr0.2TiO3 thin films were grown on the Pt–Si substrate at 700 °C by using a pulsed laser deposition technique at different oxygen partial pressure (PO2) in the range of 1–20 Pa and their properties were investigated. It is observed that the PO2 during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO2, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance–voltage (C–V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO2 of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11

Similar content being viewed by others

References

  1. M. Dawber, K.M. Rabe, J.F. Scott, Rev. Mod. Phys. 77, 1083 (2005)

    Article  ADS  Google Scholar 

  2. P.K. Sharma, G.L. Messing, D.K. Agrawal, Thin Solid Films 491, 204 (2005)

    Article  ADS  Google Scholar 

  3. W. Hu, C. Yang, W. Zhang, G. Liu, Ceram. Int. 33, 1299 (2007)

    Article  Google Scholar 

  4. I. Aulika, J. Pokorny, V. Zauls, K. Kundzins, M. Rutkis, J. Petzelt, Opt. Mater. 30, 1017 (2008)

    Article  ADS  Google Scholar 

  5. X.H. Hu, H.L.W. Chan, C.L. Choy, K.H. Wong, Appl. Phys. A 80, 591 (2005)

    Article  ADS  Google Scholar 

  6. Z. Fu, A. Wu, P.M. Vilarinho, Chem. Mater. 18, 3343 (2006)

    Article  Google Scholar 

  7. G.C. Jha, S.K. Ray, I. Manna, Thin Solid Films 516, 3416 (2008)

    Article  ADS  Google Scholar 

  8. T. Zhang, H. Gu, J. Liu, Microelectron. Eng. 66, 860 (2003)

    Article  Google Scholar 

  9. T. Delage, C. Champeaux, A. Catherinot, J.F. Seaux, V. Madrangeas, D. Cros, Thin Solid Films 279, 453–454 (2004)

    Google Scholar 

  10. Y. Gim, T. Hudson, Y. Fan, C. Kwon, A.T. Findikoglu, B.J. Gibbons, B.H. Park, Q.X. Jia, Appl. Phys. Lett. 77, 1200 (2000)

    Article  ADS  Google Scholar 

  11. D.Y. Wang, C.L. Mak, K.H. Wong, H.L.W. Chan, C.L. Choy, Ceram. Int. 30, 1745 (2004)

    Article  Google Scholar 

  12. H.F. Cheng, J. Appl. Phys. 79, 7965 (1996)

    Article  ADS  Google Scholar 

  13. F.M. Pontes, E. Longo, E.R. Leite, J.A. Varela, Thin Solid Films 386, 91 (2001)

    Article  ADS  Google Scholar 

  14. X.H. Zhu, Q.D. Meng, L.P. Yong, Y.S. He, B.L. Cheng, D.N. Zheng, J. Phys. D, Appl. Phys. 39, 2282 (2006)

    Article  ADS  Google Scholar 

  15. C. Borderon, D. Averty, R. Seveno, H.W. Gundel, Integr. Ferroelectr. 97, 12 (2008)

    Article  Google Scholar 

  16. C. Fu, F. Pan, W. Cai, Integr. Ferroelectr. 91, 112 (2007)

    Article  Google Scholar 

  17. P. Zubko, D.J. Jung, J.F. Scott, J. Appl. Phys. 100, 114113 (2006)

    Article  ADS  Google Scholar 

  18. J.P.B. Silva, K.C. Sekhar, A. Almeida, J. Agostinho Moreira, J. Martín-Sánchez, M. Pereira, A. Khodorov, M.J.M. Gomes, J. Appl. Phys. 112, 044105 (2012)

    Article  ADS  Google Scholar 

  19. K. Sahoo, D. Misra, D.C. Agrawal, Y.N. Mohapatra, S.B. Majumder, R.S. Katiyar, J. Appl. Phys. 108, 074112 (2010)

    Article  ADS  Google Scholar 

  20. A. Vorobiev, P. Rundqvist, K. Khamchane, S. Gevorgian, J. Appl. Phys. 96, 4642 (2004)

    Article  ADS  Google Scholar 

  21. P. Ehrhart, R. Thomas, J. Appl. Phys. 99, 114108 (2006)

    Article  ADS  Google Scholar 

  22. S. Zafar, R.E. Jones, B. Jiang, B. White, V. Kaushik, S. Gillespie, Appl. Phys. Lett. 73, 3533 (1998)

    Article  ADS  Google Scholar 

  23. Z.G. Ban, S.P. Alpay, J. Appl. Phys. 91, 9288 (2002)

    Article  ADS  Google Scholar 

  24. M. Kumar, S.C. Roy, M.C. Bhatnagar, S. Agarwal, G.L. Sharma, Ferroelectrics 329, 33 (2005)

    Article  Google Scholar 

  25. C. Wang, B.L. Cheng, S.Y. Wang, H.B. Lu, Y.L. Zhou, Z.H. Chen, G.Z. Yang, Thin Solid Films 485, 82 (2005)

    Article  ADS  Google Scholar 

  26. A. Gruverman, D. Wu, J.F. Scott, Phys. Rev. Lett. 100, 097601 (2008)

    Article  ADS  Google Scholar 

  27. K.C. Sekhar, A. Nautiyal, R. Nath, Appl. Phys. Express 1, 091601 (2008)

    Article  ADS  Google Scholar 

  28. L. Pintilie, M. Lisca, M. Alexe, Appl. Phys. Lett. 86, 192902 (2005)

    Article  ADS  Google Scholar 

Download references

Acknowledgements

The authors, J.P.B.S. thanks FCT for the financial support (grant SFRH/BD/44861/2008). K.C.S. thanks FCT for the Post-doc grant (SFRH/BPD/68489/2010). This work has been partially funded by: (i) FEDER through the COMPETE Program and by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Project PEST-C/FIS/UI607/2011; and (ii) European COST Actions MP0901-NanoTP and MP0903-NanoAlloy.

Author information

Authors and Affiliations

  1. Centre of Physics, University of Minho, Campus de Gualtar, 4710-057, Braga, Portugal

    J. P. B. Silva, K. C. Sekhar, M. Pereira & M. J. M. Gomes

  2. Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Rua do Campo Alegre 687, 4169-007, Porto, Portugal

    A. Almeida & J. Agostinho Moreira

Authors
  1. J. P. B. Silva
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. C. Sekhar
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. Almeida
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. Agostinho Moreira
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Pereira
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. J. M. Gomes
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to J. P. B. Silva.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Silva, J.P.B., Sekhar, K.C., Almeida, A. et al. Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films. Appl. Phys. A 113, 817–824 (2013). https://doi.org/10.1007/s00339-013-7602-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-013-7602-x

Keywords

Search

Navigation