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Direct top–down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

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Abstract

We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

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Acknowledgements

This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.

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Authors and Affiliations

  1. Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul, 143-701, Korea

    Jungho Park, Jonathan Ho, Hoyeol Yun, Miri Seo, Eleanor E. B. Campbell & Sang Wook Lee

  2. EaStCHEM, School of Chemistry, Edinburgh University, West Mains Road, Edinburgh, EH9 3JJ, UK

    Jonathan Ho & Eleanor E. B. Campbell

  3. School of Electrical Engineering, Seoul National University, Seoul, 151-744, Korea

    Myeongjin Park & Changhee Lee

  4. Department of Chemistry, Konkuk University, Seoul, 143-701, Korea

    Jung Hyun Lee & Seungmoon Pyo

Authors
  1. Jungho Park
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  2. Jonathan Ho
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  3. Hoyeol Yun
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  4. Myeongjin Park
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  9. Seungmoon Pyo
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  10. Sang Wook Lee
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Correspondence to Sang Wook Lee.

Additional information

J. Park and J. Ho contributed equally to this work.

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Park, J., Ho, J., Yun, H. et al. Direct top–down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists. Appl. Phys. A 111, 1051–1056 (2013). https://doi.org/10.1007/s00339-012-7411-7

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  • DOI: https://doi.org/10.1007/s00339-012-7411-7

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