Skip to main content
Log in

The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si+Er target

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

We fabricated Er-doped silicon-rich silicon oxide (SRSO:Er) films by pulsed laser deposition. A Si+Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500 °C.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. H. Ennen, J. Schneider, G. Pomrenke, A. Axmann: Appl. Phys. Lett. 43, 943 (1983)

    Article  ADS  Google Scholar 

  2. W.L. Ng, M.P. Temple, P.A. Childs, F. Wellhofer, K.P. Homewood: Appl. Phys. Lett. 75, 97 (1999)

    Article  ADS  Google Scholar 

  3. J.S. Ha, C.H. Bae, S.H. Nam, S.M. Park, Y.R. Jang, K.H. Yoo, K. Park: Appl. Phys. Lett. 82, 3436 (2003)

    Article  ADS  Google Scholar 

  4. C. Li, K. Kondo, T. Makimura, K. Murakami: Appl. Surf. Sci. 197198, 607 (2002)

    Google Scholar 

  5. S. Komuro, T. Katsumata, T. Morikawa, X. Zhao, H. Isshiki, Y. Aoyagi: Appl. Phys. Lett. 74, 377 (1999)

    Article  ADS  Google Scholar 

  6. G.N. van den Hoven, J.H. Shin, A. Polman, S. Lombardo, S.U. Campisano: J. Appl. Phys. 78, 2642 (1995)

    Article  ADS  Google Scholar 

  7. M. Schmidt, J. Heitmann, R. Scholz, M. Zacharias: J. Non-Cryst. Solids 299302, 678 (2002)

    Google Scholar 

  8. D.J. Lockwood: Light Emission in Silicon: From Physics to Devices, Chapt. 4 (Academic Press, New York 1998)

  9. M. Fujii, M. Yoshida, S. Hayashi, K. Yamamoto: J. Appl. Phys. 84, 4525 (1998)

    Article  ADS  Google Scholar 

  10. T. Inokuma, Y. Wakayama, T. Muramoto, R. Aoki, Y. Kurata, S. Hasegawa: J. Appl. Phys. 83, 2228 (1998)

    Article  ADS  Google Scholar 

  11. A.J. Kenyon: Prog. Quant. Electron. 26, 225 (2002)

    Article  ADS  Google Scholar 

  12. A.R. Zanatta: Appl. Phys. Lett. 82, 1395 (2003)

    Article  ADS  Google Scholar 

  13. M. Ishii, T. Ishikawa, T. Ueki, S. Komuro, T. Morikawa, Y. Aoyagi, H. Oyanagi: J. Appl. Phys. 85, 4024 (1999)

    Article  ADS  Google Scholar 

  14. S. Komuro, S. Maruyama, T. Morikawa, X. Zhao, H. Isshiki, Y. Aoyagi: Appl. Phys. Lett. 69, 3896 (1996)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to J.S. Ha.

Additional information

PACS

81.15.Fg; 81.07.-b

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ha, J., Sung, G., Lee, S. et al. The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si+Er target. Appl. Phys. A 79, 1485–1488 (2004). https://doi.org/10.1007/s00339-004-2826-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-004-2826-4

Keywords

Navigation