Abstract
We report on a study of terahertz (THz) generation using implanted InGaAs photomixers and multi-wavelength quantum dot lasers. We carry out InGaAs materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched InGaAs grown on InP. Under a 1.55 μm multi-mode InGaAs/InGaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.
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Hou, Y., Liu, J.R., Buchanan, M. et al. Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers. Nano-Micro Lett. 4, 10–13 (2012). https://doi.org/10.1007/BF03353685
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DOI: https://doi.org/10.1007/BF03353685