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Progress in silicon carbide semiconductor electronics technology

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Abstract

Silicon carbide’s demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions is expected to enable significant enhancements to a far-ranging variety of applications and systems. However, improvements in crystal growth and device fabrication processes are needed before SiC-based devices and circuits can be scaled-up and incorporated into electronic systems. This paper surveys the present status of SiC-based semiconductor electronics and identifies areas where technological maturation is needed. The prospects for resolving these obstacles are discussed. Recent achievements include the monolithic realization of SiC integrated circuit operational amplifiers and digital logic circuits, as well as significant improvements to epitaxial and bulk crystal growth processes that impact the viability of this rapidly emerging technology.

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  1. NASA Lewis Research Center, M.S. 77-1, 21000 Brookpark Road, 44135, Cleveland, OH

    Philip G. Neudeck

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Neudeck, P.G. Progress in silicon carbide semiconductor electronics technology. J. Electron. Mater. 24, 283–288 (1995). https://doi.org/10.1007/BF02659688

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  • DOI: https://doi.org/10.1007/BF02659688

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