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Silicon as an advanced window material for high power gyrotrons

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Abstract

The absorptivity of high-purity grades of silicon (Si) and its reduction by subsequent doping procedures are investigated.

The dielectric data are given for the wide range of frequencies (30 – 330 GHz) and temperatures (30 – 330 K) in comparison with the data set for sapphire. The advanced material performance in high power window applications is discussed taking into account both dielectric properties of the optimized silicon grades and thermal conductivity.

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Authors and Affiliations

  1. Applied Physics Institute, Russian Academy of Sciences, 46 Uljanov St., 603600, Nizhny Novgorod, Russia

    V. V. Parshin

  2. Forschungszentrum Karlsruhe Institut für Materialforschung, Postfach 3640, D-76021, Karlsruhe, Germany

    R. Heidinger

  3. Institute Chemistry of High-Purity Substances, Russian Academy of Sciences, 49 Tropinin St., 603600, Nizhny Novgorod, Russia

    B. A. Andreev, A. V. Gusev & V. B. Shmagin

Authors
  1. V. V. Parshin
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  2. R. Heidinger
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  3. B. A. Andreev
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  4. A. V. Gusev
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  5. V. B. Shmagin
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Parshin, V.V., Heidinger, R., Andreev, B.A. et al. Silicon as an advanced window material for high power gyrotrons. Int J Infrared Milli Waves 16, 863–877 (1995). https://doi.org/10.1007/BF02066662

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  • DOI: https://doi.org/10.1007/BF02066662

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