Abstract
Semiconductor Raman laser can act as a heterodyne demodulator of terahertz-band modulated light wave signals in wideband optical communication systems. We have been developing the semiconductor Raman laser with a waveguide structure composed of a GaP core and AlxGa1−xP cladding layers. The tapered waveguide structure can reduce the threshold pump power by increasing the internal pump power density. Fabricated tapered waveguide semiconductor Raman laser have shown the threshold pump power of 160 mW. Discussion is made on the origin of losses as well as the limit of the low pump power operation.
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Suto, K., Kimura, T. & Nishizawa, J. Tapered waveguide semiconductor raman laser. Int J Infrared Milli Waves 16, 691–712 (1995). https://doi.org/10.1007/BF02066631
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DOI: https://doi.org/10.1007/BF02066631