Abstract
The application of a Fourier spectrometer to the study of the electronic structure in the far infrared of some intermediate valence or heavy fermion materials or of highT c superconductors showed that FT-reflectivity is a powerful tool of investigation at very low energies. A very careful control of the experimental conditions and of the reference measurements is necessary to eliminate spurious reflectivities.
The results show optical transitions at very low energy and permit to evaluate the electronic structures and the effective mass of the carriers in the vicinity of the Fermi level.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
G. R. Stewart,Rev. Mod. Phys. 1984,56, 755.
J. G. Bednorz, K. A. Müller,Z. Phys. B. 1986,64, 189.
G. Czyzicholl,Physics Reports 1986,143, 277.
M. Moser, P. Wachter, J. J. M. Franse, G. P. Meisner, E. Walker,JMMM 1986,54–57, 373.
L. Degiorgi, E. Kaldis, P. Wachter,Solid State Comm. 1987,64, 873.
F. Marabelli, G. Travaglini, P. Wachter, J. J. M. Franse,Solid State Comm. 1986,59, 381.
F. Marabelli, P. Wachter (in preparation).
F. Marabelli, P. Wachter,H.P.A. 1987,60, 301.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Marabelli, F., Degiorgi, L. & Wächter, P. Far infrared reflectivity of narrow band materials. Mikrochim Acta 95, 345–347 (1988). https://doi.org/10.1007/BF01349784
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01349784