Abstract
Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization lengtha. This correction depends on the impurity scattering length and impurity concentrationN and may be of the order ofa(Na 3 ) ora(Na 3)1/2.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
I. M. Lifshitz and V. Ya. Kirpichenkov, Tunnel transparency of disordered systems,Zh. Eksp. Teor. Fiz. 77:989 (1979) [Sov. Phys. JETP 50:499 (1979)].
I. M. Lifshitz, S. A. Gredeskul, and L. A. Pastur,Introduction into the Theory of Disordered Systems (Nauka, Moscow, 1982) (in Russian).
B. I. Shklovskii and A. L. Efros, Tunnel transparency of disordered systems in a magnetic field,Zh. Eksp. Teor. Fiz. 84:811–822 (1983) [Sov. Phys. JETP 57:470–476 (1983)].
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Shklovskii, B.I., Spivak, B.Z. Effect of impurity scattering of a tunneling electron on variable-range hopping conduction. J Stat Phys 38, 267–272 (1985). https://doi.org/10.1007/BF01017862
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01017862