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Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111)

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Abstract

In x Al1−x N alloys with low indium content (0.025 < x < 0.080) were grown on Si(111) substrates, with an AlN buffer layer, using gas source molecular beam epitaxy with ammonia under nitrogen-rich conditions. Composition was varied by changing the growth temperature from 580°C to 660°C. Growth temperature in excess of 580°C was found to be necessary to obtain compositional uniformity. As temperature was varied from 590°C to 660°C, both the growth rate and indium incorporation decreased substantially. Rising In content observed near the surface of each sample was attributed to native indium oxide formation.

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Authors and Affiliations

  1. Nano Tech Center, Texas Tech University, Lubbock, TX, 79409, USA

    Md Rakib Uddin, Mahesh Pandikunta, Vladimir Mansurov, Sandeep Sohal, Denis Myasishchev, Vladimir Kuryatkov, Mark Holtz & Sergey Nikishin

  2. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409, USA

    Md Rakib Uddin, Mahesh Pandikunta, Vladimir Mansurov, Vladimir Kuryatkov & Sergey Nikishin

  3. Department of Physics, Texas Tech University, Lubbock, TX, USA

    Sandeep Sohal, Denis Myasishchev & Mark Holtz

  4. Corning Inc., Corning, NY, 14831, USA

    Georgiy M. Guryanov

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  1. Md Rakib Uddin
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  2. Mahesh Pandikunta
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  3. Vladimir Mansurov
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  9. Sergey Nikishin
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Correspondence to Md Rakib Uddin.

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Uddin, M.R., Pandikunta, M., Mansurov, V. et al. Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111). J. Electron. Mater. 41, 824–829 (2012). https://doi.org/10.1007/s11664-012-1967-z

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  • DOI: https://doi.org/10.1007/s11664-012-1967-z

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