Abstract
A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this paper. The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than one. Using pixel level sample-and-hold circuit, the KTC noise on FD node can be effectively cancelled by correlated double sampling operation. The in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size. A high speed 1000 fps 256 × 256 CMOS image sensor based on the pixel is implemented in 0.18 μm CMOS process. The chip active area is 5 mm × 7 mm with a pixel size of 14 μm × 14 μm. The developed sensor achieves a read noise level as low as 14.8e- while attaining a high fill factor of 40%. The full well capacity can contain 30840e- and the resulting signal dynamic range is 66 dB.
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Zhou, Y., Cao, Z., Qin, Q. et al. A high speed 1000 fps CMOS image sensor with low noise global shutter pixels. Sci. China Inf. Sci. 57, 1–8 (2014). https://doi.org/10.1007/s11432-013-4889-3
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DOI: https://doi.org/10.1007/s11432-013-4889-3