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Evidence of electronic growth in titanium- and cobalt-silicide islands

  • IMEC 2009
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Abstract

A possibility of growing highly mismatched and yet two-dimensional heteroepitaxial deposits, is both fascinating in terms of basic science and technologically important. So far, stabilization of flat morphology by a reduction of the overall electron energy in a quantum well (hence termed “electronic growth”), has been observed exclusively in heteroepitaxy of simple metals, lead, and silver. This work shows, that a broader class of functional materials can be grown “electronically,” such as titanium- and cobalt-silicide nano-islands on Si(111), despite their more complex electronic structure.

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Acknowledgements

The authors acknowledge technical support of M. Levinshtein and E. Roizin. This research was supported by the Israel Science Foundation (Grant No. 410/08), and one of the authors (JKT) by the Tel Aviv University Research Center for Nanoscience and Nanotechnology post-doctoral fund.

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Authors and Affiliations

  1. School of Mechanical Engineering and Materials & Nanotechnologies Program, Faculty of Engineering, Tel Aviv University, Ramat Aviv, 69978, Tel Aviv, Israel

    S. Manor, J. K. Tripathi & I. Goldfarb

  2. Research Center for Nanoscience and Nanotechnology, Tel Aviv University, Ramat Aviv, 69978, Tel Aviv, Israel

    I. Goldfarb

Authors
  1. S. Manor
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  2. J. K. Tripathi
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  3. I. Goldfarb
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Correspondence to I. Goldfarb.

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Manor, S., Tripathi, J.K. & Goldfarb, I. Evidence of electronic growth in titanium- and cobalt-silicide islands. J Mater Sci 45, 6313–6319 (2010). https://doi.org/10.1007/s10853-010-4393-8

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  • DOI: https://doi.org/10.1007/s10853-010-4393-8

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