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Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires

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Abstract

The acoustic phonon modulation (confinement) in semiconductor nanostructures and their interaction with electrons are reviewed. Special emphasis will be placed on free-standing and layered slabs, as well as nanowires. Analysis includes acoustic phonon dispersion relations, displacement wave functions, amplitudes, form factor, electron-phonon scattering rate, and electron mobility.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan

    Shigeyasu Uno, Junichi Hattori & Kazuo Nakazato

  2. Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan

    Nobuya Mori

  3. JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo, 102-0075, Japan

    Shigeyasu Uno, Junichi Hattori & Nobuya Mori

Authors
  1. Shigeyasu Uno
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  2. Junichi Hattori
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  3. Kazuo Nakazato
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  4. Nobuya Mori
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Correspondence to Shigeyasu Uno.

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Uno, S., Hattori, J., Nakazato, K. et al. Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires. J Comput Electron 10, 104–120 (2011). https://doi.org/10.1007/s10825-010-0343-6

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  • DOI: https://doi.org/10.1007/s10825-010-0343-6

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