Abstract
We investigated the field emission current from a p-type silicon tip with large resistivity of 4 × 103 Ω cm for light illumination with a photon energy of 1.3 eV and tip-anode voltages of 0.7–5.0 kV. Additional AC voltage with amplitude 30–60 V and frequency varying in the range of 10–107 Hz was applied to the tip which resulted in variations of emission current. We investigated the dependence of this phenomenon on the AC signal parameters, light intensity and temperature. The resonant-like frequency dependence of the emission current is because the tip acts as a driven plasmonic resonator. The results represent an important step forward for the development of high-frequency display systems based on electron field emission.
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P.G. Borzyak, E.I. Givargizov, G.G. Kulishova, I.E. Lifshits, A.N. Stepanova, A.F. Yatsenko, Emission properties of multitip SixGe1−x photofield-emission cathodes fabricated by crystallization from the vapor phase. Bull. Acad. Sci. USSR Phys. Ser. (USA) 40(8), 16–19 (1976)
R. Stratton, Theory of field emission from semiconductors. Phys. Rev. 125(1), 67–82 (1962)
L.M. Baskin, O.I. Lvov, G.N. Fursey, General features of field emission from semiconductors. Phys. Status Solidi (b) 47(1), 49–62 (1971)
R. Stratton, Field emission from semiconductors. Proc. Phys. Soc. B 68(10), 746–757 (1955)
S.R. Hofstein, G. Warfield, Physical limitations on the frequency response of a semiconductor surface inversion layer. Solid State Electron. 8(3), 321–341 (1965)
K. Iwami, A. Iizuka, N. Umeda, Laser stimulated electron field emission at the plasmon-resonant wavelength, in Proceedings of the 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, (Kaohsiung, Taiwan, 2011) pp. 1085–1088
S.M. Targ, Short Course on Theoretical Mechanics (Higher School, Moscow, 1981). (in Russian)
B.V. Stetsenko, A.F. Yatsenko, L.S. Miroshnichenko, Effect of surface states on transient processes in silicon field cathodes. Phys. Status Solidi (a) 1(2), 349–355 (1970)
B.V. Stetsenko, A.I. Shchurenko, On relationship between the field at an autoemitter top, anode voltage and cathode geometry. Solid State Electron. 56(1), 35–39 (2011)
A.V. Rzhanov, Electronic Processes on Semiconductor Surfaces (Nauka, Moscow, 1971). (in Russian)
B.P. Bundza, B.V. Stetsenko, Potential distribution in a photofield-emission cathode and model for its operation. Bull. Acad. Sci. USSR Phys. Ser. (USA) 40(8), 32–36 (1976)
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Financial support by DFG (EL/16/2, SPP 1391) and Centre of Innovative Emerging Materials (CINEMA), Mainz.
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Zaporozhchenko, A.V., Chernov, S.V., Odnodvorets, L.V. et al. Photon-assisted field emission from a Si tip at addition of an AC low voltage. Appl. Phys. A 120, 161–165 (2015). https://doi.org/10.1007/s00339-015-9064-9
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DOI: https://doi.org/10.1007/s00339-015-9064-9