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Photon-assisted field emission from a Si tip at addition of an AC low voltage

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Abstract

We investigated the field emission current from a p-type silicon tip with large resistivity of 4 × 103 Ω cm for light illumination with a photon energy of 1.3 eV and tip-anode voltages of 0.7–5.0 kV. Additional AC voltage with amplitude 30–60 V and frequency varying in the range of 10–107 Hz was applied to the tip which resulted in variations of emission current. We investigated the dependence of this phenomenon on the AC signal parameters, light intensity and temperature. The resonant-like frequency dependence of the emission current is because the tip acts as a driven plasmonic resonator. The results represent an important step forward for the development of high-frequency display systems based on electron field emission.

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Acknowledgments

Financial support by DFG (EL/16/2, SPP 1391) and Centre of Innovative Emerging Materials (CINEMA), Mainz.

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Correspondence to S. A. Nepijko.

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Zaporozhchenko, A.V., Chernov, S.V., Odnodvorets, L.V. et al. Photon-assisted field emission from a Si tip at addition of an AC low voltage. Appl. Phys. A 120, 161–165 (2015). https://doi.org/10.1007/s00339-015-9064-9

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  • DOI: https://doi.org/10.1007/s00339-015-9064-9

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