Applied Physics A

, Volume 113, Issue 2, pp 315–319

Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer

  • Jian-Yong Xiong
  • Yi-Qin Xu
  • Bin-Bin Ding
  • Fang Zhao
  • Jing-Jing Song
  • Shu-Wen Zheng
  • Li Zhang
  • Tao Zhang
  • Guang-Han Fan
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DOI: 10.1007/s00339-013-7923-9

Cite this article as:
Xiong, JY., Xu, YQ., Ding, BB. et al. Appl. Phys. A (2013) 113: 315. doi:10.1007/s00339-013-7923-9

Abstract

The blue InGaN light-emitting diodes (LEDs), employing a lattice-compensated p-AlGaN/InGaN superlattice (SL) interlayer to link the last quantum barrier and electron blocking layer (EBL), are proposed and investigated numerically. The simulation results indicate that the newly designed LEDs have better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region over the conventional LEDs mainly attributed to the mitigated polarization-induced downward band bending. Furthermore, the markedly improved output power and efficiency droop are also suggested when the conventional LEDs corresponding to experiment data are replaced by the newly designed LEDs.

Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Jian-Yong Xiong
    • 1
  • Yi-Qin Xu
    • 2
  • Bin-Bin Ding
    • 1
  • Fang Zhao
    • 1
  • Jing-Jing Song
    • 1
  • Shu-Wen Zheng
    • 1
  • Li Zhang
    • 1
  • Tao Zhang
    • 1
  • Guang-Han Fan
    • 1
  1. 1.Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and TechnologySouth China Normal UniversityGuangzhouChina
  2. 2.Guangdong General Research Institute for Industrial TechnologyGuangzhouChina

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