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Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer

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Abstract

The blue InGaN light-emitting diodes (LEDs), employing a lattice-compensated p-AlGaN/InGaN superlattice (SL) interlayer to link the last quantum barrier and electron blocking layer (EBL), are proposed and investigated numerically. The simulation results indicate that the newly designed LEDs have better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region over the conventional LEDs mainly attributed to the mitigated polarization-induced downward band bending. Furthermore, the markedly improved output power and efficiency droop are also suggested when the conventional LEDs corresponding to experiment data are replaced by the newly designed LEDs.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong (Grant No. 2012A080304016), and the first phase of construction of Guangdong Research Institute of Semiconductor Lighting Industrial Technology (Project No. 2010A081001001).

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Authors and Affiliations

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China

    Jian-Yong Xiong, Bin-Bin Ding, Fang Zhao, Jing-Jing Song, Shu-Wen Zheng, Li Zhang, Tao Zhang & Guang-Han Fan

  2. Guangdong General Research Institute for Industrial Technology, Guangzhou, 510650, China

    Yi-Qin Xu

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  1. Jian-Yong Xiong
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  2. Yi-Qin Xu
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  7. Li Zhang
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  9. Guang-Han Fan
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Correspondence to Guang-Han Fan.

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Xiong, JY., Xu, YQ., Ding, BB. et al. Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer. Appl. Phys. A 113, 315–319 (2013). https://doi.org/10.1007/s00339-013-7923-9

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  • DOI: https://doi.org/10.1007/s00339-013-7923-9

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