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A qualitative explanation of tunneling characteristics of high-T c junctions in terms of the McMillan proximity model

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Abstract

In this paper the influence of proximity effects on the transport properties of high-T c superconductors is considered. On the basis of the experimental results on tunneling spectroscopy reported in the current literature, we discuss some of the main features ofdI/dV vs.V characteristics. More particularly, attention is focused on the depression of gap structure, the presence of conductance peaks due to the counterelectrode gap, and “zero-bias anomalies.” A possible explanation of those features in terms of the McMillan proximity model is given along with some examples of application of the model to experimental data.

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Di Chiara, A., Fontana, F., Peluso, G. et al. A qualitative explanation of tunneling characteristics of high-T c junctions in terms of the McMillan proximity model. J Supercond 4, 35–43 (1991). https://doi.org/10.1007/BF00618295

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